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| NTE49 (NPN) & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Note 1. NTE49 is a discontinued device and no longer available. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current ON Characteristics (Note 2) DC Current Gain hFE IC = 50mA, VCE = 1V IC = 250mA, VCE = 1V IC = 500mA, VCE = 1V Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance fT Cob IC = 250mA, VCE = 5V, f = 100MHz, Note 1 VCB = 10V, IE = 0, f = 100kHz 50 - 150 6 - 12 MHz pF VCE(sat) VBE(on) IC = 250mA, IB = 10mA IC = 250mA, IB = 25mA IC = 250mA, VCE = 5V 80 60 - - - - 125 100 55 0.18 0.1 0.74 - - - 0.4 - 1.2 V V V V(BR)CEO IC = 1mA, IB = 0 V(BR)EBO IE = 100A, IC = 0 ICBO VCB = 40V, IE = 0 100 4 - - - - - - 100 V V nA Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .380 (9.56) .180 (4.57) C .132 (3.35) Dia .500 (12.7) 1.200 (30.48) Ref .325 (9.52) .300 (7.62) .070 (1.78) x 45 Chamf .050 (1.27) .400 (10.16) Min E B C .100 (2.54) .100 (2.54) |
Price & Availability of NTE50
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